IPD11DP10NMATMA1

Infineon Technologies

Product No:

IPD11DP10NMATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Batch:

-

Datasheet:

-

Description:

TRENCH >=100V PG-TO252-3

Quantity:

Delivery:

Payment:

In Stock : 136

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    1.6055

    1.6055

  • 10

    1.33665

    13.3665

  • 100

    1.064285

    106.4285

  • 500

    0.900505

    450.2525

  • 1000

    0.764066

    764.066

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1.7mA
Base Product Number IPD11D
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 111mOhm @ 18A, 10V
Power Dissipation (Max) 3W (Ta), 125W (Tc)
Supplier Device Package PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta), 22A (Tc)