IPD180N10N3GATMA1
Infineon Technologies
Product No:
IPD180N10N3GATMA1
Manufacturer:
Package:
PG-TO252-3
Batch:
-
Datasheet:
Description:
MOSFET N-CH 100V 43A TO252-3
Quantity:
Delivery:
Payment:
In Stock : 12240 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.197
1.197
10
1.07445
10.7445
100
0.83752
83.752
500
0.691847
345.9235
1000
0.546193
546.193
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 33µA |
| Base Product Number | IPD180 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 33A, 10V |
| Power Dissipation (Max) | 71W (Tc) |
| Supplier Device Package | PG-TO252-3 |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
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