IPD30N03S2L20ATMA1
Infineon Technologies
Product No:
IPD30N03S2L20ATMA1
Manufacturer:
Package:
PG-TO252-3-11
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 30V 30A TO252-31
Quantity:
Delivery:
Payment:
In Stock : 595 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.4535
1.4535
10
1.3091
13.091
100
1.052315
105.2315
500
0.864576
432.288
1000
0.716366
716.366
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2V @ 23µA |
| Base Product Number | IPD30N03 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 18A, 10V |
| Power Dissipation (Max) | 60W (Tc) |
| Supplier Device Package | PG-TO252-3-11 |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
