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IPD30N03S4L14ATMA1

Infineon Technologies

Product No:

IPD30N03S4L14ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 30V 30A TO252-3

Quantity:

Delivery:

Payment:

In Stock : 1649

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    0.95

    0.95

  • 10

    0.85025

    8.5025

  • 100

    0.66291

    66.291

  • 500

    0.547637

    273.8185

  • 1000

    0.432354

    432.354

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±16V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 10µA
Base Product Number IPD30N03
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 13.6mOhm @ 30A, 10V
Power Dissipation (Max) 31W (Tc)
Supplier Device Package PG-TO252-3-11
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 980 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)