Home / Single FETs, MOSFETs / IPD30N06S4L23ATMA2

IPD30N06S4L23ATMA2

Infineon Technologies

Product No:

IPD30N06S4L23ATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 60V 30A TO252-31

Quantity:

Delivery:

Payment:

In Stock : 1289

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    0.874

    0.874

  • 10

    0.76855

    7.6855

  • 100

    0.58938

    58.938

  • 500

    0.465937

    232.9685

  • 1000

    0.372742

    372.742

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±16V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 10µA
Base Product Number IPD30N06
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 23mOhm @ 30A, 10V
Power Dissipation (Max) 36W (Tc)
Supplier Device Package PG-TO252-3-11
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 1560 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)