Home / Single FETs, MOSFETs / IPD50N03S2L06ATMA1

IPD50N03S2L06ATMA1

Infineon Technologies

Product No:

IPD50N03S2L06ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 30V 50A TO252-31

Quantity:

Delivery:

Payment:

In Stock : 2433

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    2.603

    2.603

  • 10

    2.33605

    23.3605

  • 100

    1.87758

    187.758

  • 500

    1.54261

    771.305

  • 1000

    1.278168

    1278.168

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 2V @ 85µA
Base Product Number IPD50
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 6.4mOhm @ 50A, 10V
Power Dissipation (Max) 136W (Tc)
Supplier Device Package PG-TO252-3-11
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)