IPD530N15N3GATMA1
Infineon Technologies
Product No:
IPD530N15N3GATMA1
Manufacturer:
Package:
PG-TO252-3
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 150V 21A TO252-3
Quantity:
Delivery:
Payment:
In Stock : 3850 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.4915
1.4915
10
1.3414
13.414
100
1.07844
107.844
500
0.886065
443.0325
1000
0.734179
734.179
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 35µA |
| Base Product Number | IPD530 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 18A, 10V |
| Power Dissipation (Max) | 68W (Tc) |
| Supplier Device Package | PG-TO252-3 |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 150 V |
| Input Capacitance (Ciss) (Max) @ Vds | 887 pF @ 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
