IPD60N10S4L12ATMA1
Infineon Technologies
Product No:
IPD60N10S4L12ATMA1
Manufacturer:
Package:
PG-TO252-3-313
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 100V 60A TO252-3
Quantity:
Delivery:
Payment:
In Stock : 72366 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.71
1.71
10
1.5352
15.352
100
1.233765
123.3765
500
1.013688
506.844
1000
0.839914
839.914
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q101, HEXFET® |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±16V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.1V @ 46µA |
| Base Product Number | IPD60N10 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 60A, 10V |
| Power Dissipation (Max) | 94W (Tc) |
| Supplier Device Package | PG-TO252-3-313 |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3170 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
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