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IPD90N06S4L03ATMA2

Infineon Technologies

Product No:

IPD90N06S4L03ATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 60V 90A TO252-31

Quantity:

Delivery:

Payment:

In Stock : 3461

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    2.014

    2.014

  • 10

    1.8107

    18.107

  • 100

    1.455305

    145.5305

  • 500

    1.195708

    597.854

  • 1000

    0.990726

    990.726

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±16V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 90µA
Base Product Number IPD90
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 3.5mOhm @ 90A, 10V
Power Dissipation (Max) 150W (Tc)
Supplier Device Package PG-TO252-3-11
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 13000 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)