IPG20N06S2L35ATMA1
Infineon Technologies
Product No:
IPG20N06S2L35ATMA1
Manufacturer:
Package:
PG-TDSON-8-4
Batch:
-
Datasheet:
-
Description:
MOSFET 2N-CH 55V 20A 8TDSON
Quantity:
Delivery:
Payment:
In Stock : 15000 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.2065
1.2065
10
1.0754
10.754
100
0.838375
83.8375
500
0.692569
346.2845
1000
0.546772
546.772
2000
0.510321
1020.642
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate |
| Power - Max | 65W |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2V @ 27µA |
| Base Product Number | IPG20N |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 15A, 10V |
| Supplier Device Package | PG-TDSON-8-4 |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
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