IPG20N06S4L11ATMA2
Infineon Technologies
Product No:
IPG20N06S4L11ATMA2
Manufacturer:
Package:
PG-TDSON-8-10
Batch:
-
Datasheet:
-
Description:
MOSFET_)40V 60V)
Quantity:
Delivery:
Payment:
In Stock : 15000 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.5485
1.5485
10
1.28915
12.8915
100
1.026285
102.6285
500
0.868376
434.188
1000
0.736801
736.801
2000
0.69996
1399.92
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate |
| Power - Max | 65W (Tc) |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.2V @ 28µA |
| Base Product Number | IPG20N |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 11.2mOhm @ 17A, 10V |
| Supplier Device Package | PG-TDSON-8-10 |
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance (Ciss) (Max) @ Vds | 4020pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
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