IPG20N10S4L35ATMA1
Infineon Technologies
Product No:
IPG20N10S4L35ATMA1
Manufacturer:
Package:
PG-TDSON-8-4
Batch:
-
Datasheet:
-
Description:
MOSFET 2N-CH 8TDSON
Quantity:
Delivery:
Payment:
In Stock : 24151 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.197
1.197
10
1.06875
10.6875
100
0.833055
83.3055
500
0.688199
344.0995
1000
0.543314
543.314
2000
0.5071
1014.2
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate |
| Power - Max | 43W |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.1V @ 16µA |
| Base Product Number | IPG20N |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 17A, 10V |
| Supplier Device Package | PG-TDSON-8-4 |
| Gate Charge (Qg) (Max) @ Vgs | 17.4nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance (Ciss) (Max) @ Vds | 1105pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
