IPI60R165CPXKSA1
Infineon Technologies
Product No:
IPI60R165CPXKSA1
Manufacturer:
Package:
PG-TO262-3-1
Batch:
-
Datasheet:
-
Description:
HIGH POWER_LEGACY
Quantity:
Delivery:
Payment:
In Stock : 500 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
5.187
5.187
10
4.3586
43.586
100
3.52602
352.602
500
3.134259
1567.1295
1000
2.683712
2683.712
2000
2.527
5054
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolMOS® |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 790µA |
| Base Product Number | IPI60R165 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 12A, 10V |
| Power Dissipation (Max) | 192W (Tc) |
| Supplier Device Package | PG-TO262-3-1 |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
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