
Infineon Technologies
Product No:
IPI60R190C6XKSA1
Manufacturer:
Package:
PG-TO262-3
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 600V 20.2A TO262-3
Quantity:
Delivery:

Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
3.382
3.382
10
3.03905
30.3905
100
2.49033
249.033
500
2.119982
1059.991
1000
1.787928
1787.928
2000
1.698534
3397.068
5000
1.634684
8173.42
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| Mfr | Infineon Technologies |
| Series | CoolMOS™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 630µA |
| Base Product Number | IPI60R190 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9.5A, 10V |
| Power Dissipation (Max) | 151W (Tc) |
| Supplier Device Package | PG-TO262-3 |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |