IPI65R190C6XKSA1
Infineon Technologies
Product No:
IPI65R190C6XKSA1
Manufacturer:
Package:
PG-TO262-3
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 650V 20.2A TO262-3
Quantity:
Delivery:
Payment:
In Stock : 480 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
3.686
3.686
10
3.3079
33.079
100
2.71054
271.054
500
2.307455
1153.7275
1000
1.946037
1946.037
2000
1.848738
3697.476
5000
1.779236
8896.18
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolMOS™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 730µA |
| Base Product Number | IPI65R190 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
| Power Dissipation (Max) | 151W (Tc) |
| Supplier Device Package | PG-TO262-3 |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
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