IPN50R1K4CEATMA1
Infineon Technologies
Product No:
IPN50R1K4CEATMA1
Manufacturer:
Package:
PG-SOT223-3
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 500V 4.8A SOT223
Quantity:
Delivery:
Payment:
In Stock : 3000 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.5795
0.5795
10
0.49495
4.9495
100
0.343995
34.3995
500
0.268603
134.3015
1000
0.21832
218.32
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolMOS™ CE |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 70µA |
| Base Product Number | IPN50R1 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 900mA, 13V |
| Power Dissipation (Max) | 5W (Tc) |
| Supplier Device Package | PG-SOT223-3 |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 178 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Tc) |
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