IPN60R2K0PFD7SATMA1
Infineon Technologies
Product No:
IPN60R2K0PFD7SATMA1
Manufacturer:
Package:
PG-SOT223-3-1
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 600V 3A SOT223
Quantity:
Delivery:
Payment:
In Stock : 5672 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.684
0.684
10
0.5909
5.909
100
0.409355
40.9355
500
0.342019
171.0095
1000
0.29107
291.07
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolMOS™PFD7 |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.5V @ 30µA |
| Base Product Number | IPN60R2 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V |
| Power Dissipation (Max) | 6W (Tc) |
| Supplier Device Package | PG-SOT223-3-1 |
| Gate Charge (Qg) (Max) @ Vgs | 3.8 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 134 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
