Home / Single FETs, MOSFETs / IPN60R360PFD7SATMA1

IPN60R360PFD7SATMA1

Infineon Technologies

Product No:

IPN60R360PFD7SATMA1

Manufacturer:

Infineon Technologies

Package:

PG-SOT223-3-1

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 10A SOT223

Quantity:

Delivery:

Payment:

In Stock : 14401

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    1.197

    1.197

  • 10

    0.97755

    9.7755

  • 100

    0.760285

    76.0285

  • 500

    0.644385

    322.1925

  • 1000

    0.524932

    524.932

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series CoolMOS™PFD7
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-261-3
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 140µA
Base Product Number IPN60R
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 360mOhm @ 2.9A, 10V
Power Dissipation (Max) 7W (Tc)
Supplier Device Package PG-SOT223-3-1
Gate Charge (Qg) (Max) @ Vgs 12.7 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 534 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)