IPN80R2K4P7ATMA1
Infineon Technologies
Product No:
IPN80R2K4P7ATMA1
Manufacturer:
Package:
PG-SOT223
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 800V 2.5A SOT223
Quantity:
Delivery:
Payment:
In Stock : 1895 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.817
0.817
10
0.67165
6.7165
100
0.5225
52.25
500
0.442852
221.426
1000
0.360753
360.753
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolMOS™ P7 |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 40µA |
| Base Product Number | IPN80R2 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 2.4Ohm @ 800mA, 10V |
| Power Dissipation (Max) | 6.3W (Tc) |
| Supplier Device Package | PG-SOT223 |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
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