IPP048N12N3GXKSA1

Infineon Technologies

Product No:

IPP048N12N3GXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3-1

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 120V 100A TO220-3

Quantity:

Delivery:

Payment:

In Stock : 1405

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    4.3795

    4.3795

  • 10

    3.933

    39.33

  • 100

    3.222685

    322.2685

  • 500

    2.743391

    1371.6955

  • 1000

    2.313696

    2313.696

  • 2000

    2.198015

    4396.03

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 4V @ 230µA
Base Product Number IPP048
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 4.8mOhm @ 100A, 10V
Power Dissipation (Max) 300W (Tc)
Supplier Device Package PG-TO220-3-1
Gate Charge (Qg) (Max) @ Vgs 182 nC @ 10 V
Drain to Source Voltage (Vdss) 120 V
Input Capacitance (Ciss) (Max) @ Vds 12000 pF @ 60 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)