
Infineon Technologies
Product No:
IPP12CN10LGXKSA1
Manufacturer:
Package:
PG-TO220-3
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 100V 69A TO220-3
Quantity:
Delivery:

Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.957
1.957
10
1.75655
17.5655
100
1.411795
141.1795
500
1.159931
579.9655
1000
0.961096
961.096
2000
0.894814
1789.628
5000
0.861669
4308.345
10000
0.828533
8285.33
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| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.4V @ 83µA |
| Base Product Number | IPP12CN10 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 69A, 10V |
| Power Dissipation (Max) | 125W (Tc) |
| Supplier Device Package | PG-TO220-3 |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 69A (Tc) |