IPP60R099CPXKSA1
Infineon Technologies
Product No:
IPP60R099CPXKSA1
Manufacturer:
Package:
PG-TO220-3
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 650V 31A TO220-3
Quantity:
Delivery:
Payment:
In Stock : 1302 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
8.588
8.588
10
7.7615
77.615
100
6.425705
642.5705
500
5.595386
2797.693
1000
4.873405
4873.405
2000
4.692905
9385.81
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolMOS™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Not For New Designs |
| Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
| Base Product Number | IPP60R099 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 18A, 10V |
| Power Dissipation (Max) | 255W (Tc) |
| Supplier Device Package | PG-TO220-3 |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
