IPP60R190E6XKSA1

Infineon Technologies

Product No:

IPP60R190E6XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 20.2A TO220-3

Quantity:

Delivery:

Payment:

In Stock : 1988

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    3.382

    3.382

  • 10

    3.04095

    30.4095

  • 100

    2.49185

    249.185

  • 500

    2.121255

    1060.6275

  • 1000

    1.789012

    1789.012

  • 2000

    1.69956

    3399.12

  • 5000

    1.635662

    8178.31

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Not For New Designs
Vgs(th) (Max) @ Id 3.5V @ 630µA
Base Product Number IPP60R190
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 190mOhm @ 9.5A, 10V
Power Dissipation (Max) 151W (Tc)
Supplier Device Package PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)