IPP60R199CPXKSA1
Infineon Technologies
Product No:
IPP60R199CPXKSA1
Manufacturer:
Package:
PG-TO220-3
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 650V 16A TO220-3
Quantity:
Delivery:
Payment:
In Stock : 588 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
4.199
4.199
10
3.7734
37.734
100
3.0913
309.13
500
2.631576
1315.788
1000
2.2194
2219.4
2000
2.10843
4216.86
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolMOS™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Not For New Designs |
| Vgs(th) (Max) @ Id | 3.5V @ 660µA |
| Base Product Number | IPP60R199 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 199mOhm @ 9.9A, 10V |
| Power Dissipation (Max) | 139W (Tc) |
| Supplier Device Package | PG-TO220-3 |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1520 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
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