Home / Single FETs, MOSFETs / IPP65R099CFD7AAKSA1

IPP65R099CFD7AAKSA1

Infineon Technologies

Product No:

IPP65R099CFD7AAKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 24A TO220-3

Quantity:

Delivery:

Payment:

In Stock : 43

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    6.764

    6.764

  • 10

    5.795

    57.95

  • 100

    4.829515

    482.9515

  • 500

    4.261339

    2130.6695

  • 1000

    3.835198

    3835.198

  • 2000

    3.593726

    7187.452

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS™ CFD7A
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 630µA
Base Product Number IPP65R099
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 99mOhm @ 12.5A, 10V
Power Dissipation (Max) 127W (Tc)
Supplier Device Package PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 2513 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)