Home / Single FETs, MOSFETs / IPP65R115CFD7AAKSA1

IPP65R115CFD7AAKSA1

Infineon Technologies

Product No:

IPP65R115CFD7AAKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 21A TO220-3

Quantity:

Delivery:

Payment:

In Stock : 27

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    6.0515

    6.0515

  • 10

    5.08155

    50.8155

  • 100

    4.11122

    411.122

  • 500

    3.654384

    1827.192

  • 1000

    3.129072

    3129.072

  • 2000

    2.946358

    5892.716

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS™ CFD7
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 490µA
Base Product Number IPP65R115
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 115mOhm @ 9.7A, 10V
Power Dissipation (Max) 114W (Tc)
Supplier Device Package PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)