IPP65R600C6

Infineon Technologies

Product No:

IPP65R600C6

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3-1

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 1791

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 462

    0.6175

    285.285

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 210µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 600mOhm @ 2.1A, 10V
Power Dissipation (Max) 63W (Tc)
Supplier Device Package PG-TO220-3-1
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)