IPS60R1K0PFD7SAKMA1
Infineon Technologies
Product No:
IPS60R1K0PFD7SAKMA1
Manufacturer:
Package:
PG-TO251-3
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 650V 4.7A TO251-3
Quantity:
Delivery:
Payment:
In Stock : 866 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.8455
0.8455
10
0.75905
7.5905
100
0.592135
59.2135
500
0.489155
244.5775
1000
0.386184
386.184
2000
0.36044
720.88
5000
0.342418
1712.09
10000
0.329546
3295.46
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolMOS™PFD7 |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Product Status | Not For New Designs |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Base Product Number | IPS60R1 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1A, 10V |
| Power Dissipation (Max) | 26W (Tc) |
| Supplier Device Package | PG-TO251-3 |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
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