IPT026N10N5ATMA1
Infineon Technologies
Product No:
IPT026N10N5ATMA1
Manufacturer:
Package:
PG-HSOF-8-1
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 100V 27A/202A 8HSOF
Quantity:
Delivery:
Payment:
In Stock : 7232 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
4.845
4.845
10
4.0698
40.698
100
3.292415
329.2415
500
2.926551
1463.2755
1000
2.505862
2505.862
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | OptiMOS™5 |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerSFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.8V @ 158µA |
| Base Product Number | IPT026 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 150A, 10V |
| Power Dissipation (Max) | 214W (Tc) |
| Supplier Device Package | PG-HSOF-8-1 |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8800 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 202A (Tc) |
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