IPT210N25NFDATMA1

Infineon Technologies

Product No:

IPT210N25NFDATMA1

Manufacturer:

Infineon Technologies

Package:

PG-HSOF-8-1

Batch:

-

Datasheet:

-

Description:

MV POWER MOS

Quantity:

Delivery:

Payment:

In Stock : 1970

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    9.2435

    9.2435

  • 10

    8.3524

    83.524

  • 100

    6.915145

    691.5145

  • 500

    6.021632

    3010.816

  • 1000

    5.244646

    5244.646

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerSFN
Product Status Active
Vgs(th) (Max) @ Id 4V @ 267µA
Base Product Number IPT210
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 21mOhm @ 69A, 10V
Power Dissipation (Max) 375W (Tc)
Supplier Device Package PG-HSOF-8-1
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Drain to Source Voltage (Vdss) 250 V
Input Capacitance (Ciss) (Max) @ Vds 7000 pF @ 125 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 69A (Tc)