IRF640NPBF

Infineon Technologies

Product No:

IRF640NPBF

Manufacturer:

Infineon Technologies

Package:

TO-220AB

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 200V 18A TO220AB

Quantity:

Delivery:

Payment:

In Stock : 71329

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    1.083

    1.083

  • 10

    0.88635

    8.8635

  • 100

    0.68913

    68.913

  • 500

    0.584098

    292.049

  • 1000

    0.475817

    475.817

  • 2000

    0.447925

    895.85

  • 5000

    0.426598

    2132.99

  • 10000

    0.406904

    4069.04

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series HEXFET®
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Not For New Designs
Vgs(th) (Max) @ Id 4V @ 250µA
Base Product Number IRF640
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 150mOhm @ 11A, 10V
Power Dissipation (Max) 150W (Tc)
Supplier Device Package TO-220AB
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
Drain to Source Voltage (Vdss) 200 V
Input Capacitance (Ciss) (Max) @ Vds 1160 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)