IRFD110PBF
Vishay Siliconix
Product No:
IRFD110PBF
Manufacturer:
Package:
4-HVMDIP
Batch:
-
Datasheet:
Description:
MOSFET N-CH 100V 1A 4DIP
Quantity:
Delivery:
Payment:
In Stock : 27011 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.539
1.539
10
1.37655
13.7655
100
1.07331
107.331
500
0.886635
443.3175
1000
0.699979
699.979
2000
0.653315
1306.63
5000
0.620644
3103.22
10000
0.597312
5973.12
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | IRFD110 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 600mA, 10V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Supplier Device Package | 4-HVMDIP |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
