NTH4L025N065SC1
onsemi
Product No:
NTH4L025N065SC1
Manufacturer:
Package:
TO-247-4L
Batch:
-
Datasheet:
Description:
SILICON CARBIDE (SIC) MOSFET - 1
Quantity:
Delivery:
Payment:
In Stock : 409 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
20.4535
20.4535
10
18.17255
181.7255
100
15.894355
1589.4355
500
13.563188
6781.594
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Product Information
Parameter Info
User Guide
| Mfr | onsemi |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | +22V, -8V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-4 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.3V @ 15.5mA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 28.5mOhm @ 45A, 18V |
| Power Dissipation (Max) | 348W (Tc) |
| Supplier Device Package | TO-247-4L |
| Gate Charge (Qg) (Max) @ Vgs | 164 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3480 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Current - Continuous Drain (Id) @ 25°C | 99A (Tc) |
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30,000,000Standard Product Unit
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