R6509END3TL1
Rohm Semiconductor
Product No:
R6509END3TL1
Manufacturer:
Package:
TO-252
Batch:
-
Datasheet:
-
Description:
650V 9A TO-252, LOW-NOISE POWER
Quantity:
Delivery:
Payment:
In Stock : 4440 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
2.052
2.052
10
1.7062
17.062
100
1.358405
135.8405
500
1.149386
574.693
1000
0.975232
975.232
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Product Information
Parameter Info
User Guide
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 230µA |
| Base Product Number | R6509 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 585mOhm @ 2.8A, 10V |
| Power Dissipation (Max) | 94W (Tc) |
| Supplier Device Package | TO-252 |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
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