R6509ENXC7G
Rohm Semiconductor
Product No:
R6509ENXC7G
Manufacturer:
Package:
TO-220FM
Batch:
-
Datasheet:
-
Description:
650V 9A TO-220FM, LOW-NOISE POWE
Quantity:
Delivery:
Payment:
In Stock : 1000 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
2.546
2.546
10
2.13655
21.3655
100
1.72881
172.881
500
1.536739
768.3695
1000
1.315826
1315.826
2000
1.239
2478
5000
1.188688
5943.44
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Product Information
Parameter Info
User Guide
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 230µA |
| Base Product Number | R6509 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 585mOhm @ 2.8A, 10V |
| Power Dissipation (Max) | 48W (Tc) |
| Supplier Device Package | TO-220FM |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
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