RCD100N19TL
Rohm Semiconductor
Product No:
RCD100N19TL
Manufacturer:
Package:
CPT3
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 190V 10A CPT3
Quantity:
Delivery:
Payment:
In Stock : 1108 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.2825
1.2825
10
1.0469
10.469
100
0.814055
81.4055
500
0.690004
345.002
1000
0.562077
562.077
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Product Information
Parameter Info
User Guide
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Base Product Number | RCD100 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 182mOhm @ 5A, 10V |
| Power Dissipation (Max) | 850mW (Ta), 20W (Tc) |
| Supplier Device Package | CPT3 |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 190 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
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