RF4E110BNTR

Rohm Semiconductor

Product No:

RF4E110BNTR

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Package:

HUML2020L8

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Description:

MOSFET N-CH 30V 11A HUML2020L8

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Parameter Info

User Guide

Mfr	Rohm Semiconductor
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-PowerUDFN
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Base Product Number	RF4E110
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	11.1mOhm @ 11A, 10V
Power Dissipation (Max)	2W (Ta)
Supplier Device Package	HUML2020L8
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	11A (Ta)