RQ3E180AJTB1

Rohm Semiconductor

Product No:

RQ3E180AJTB1

Manufacturer:

Rohm Semiconductor

Package:

8-HSMT (3.2x3)

Batch:

-

Datasheet:

-

Description:

NCH 30V 18A MIDDLE POWER MOSFET:

Quantity:

Delivery:

Payment:

In Stock : 2946

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    1.672

    1.672

  • 10

    1.0602

    10.602

  • 100

    0.784605

    78.4605

  • 500

    0.720974

    360.487

  • 1000

    0.59374

    593.74

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Product Information

Parameter Info
User Guide
Mfr Rohm Semiconductor
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±12V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 1.5V @ 11mA
Base Product Number RQ3E180
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 4.5mOhm @ 18A, 4.5V
Power Dissipation (Max) 2W (Ta), 30W (Tc)
Supplier Device Package 8-HSMT (3.2x3)
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 4.5 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 4290 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 30A (Tc)