SCT2280KEGC11
Rohm Semiconductor
Product No:
SCT2280KEGC11
Manufacturer:
Package:
TO-247N
Batch:
-
Datasheet:
-
Description:
1200V, 14A, THD, SILICON-CARBIDE
Quantity:
Delivery:
Payment:
In Stock : 2240 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
11.932
11.932
10
10.5089
105.089
100
9.088365
908.8365
500
8.236348
4118.174
1000
7.554723
7554.723
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Product Information
Parameter Info
User Guide
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | +22V, -6V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 1.4mA |
| Base Product Number | SCT2280 |
| Operating Temperature | 175°C |
| Rds On (Max) @ Id, Vgs | 364mOhm @ 4A, 18V |
| Power Dissipation (Max) | 108W (Tc) |
| Supplier Device Package | TO-247N |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 667 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
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