SCT2280KEHRC11

Rohm Semiconductor

Product No:

SCT2280KEHRC11

Manufacturer:

Rohm Semiconductor

Package:

TO-247N

Batch:

-

Datasheet:

Description:

1200V, 14A, THD, SILICON-CARBIDE

Quantity:

Delivery:

Payment:

In Stock : 450

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    13.718

    13.718

  • 10

    12.08495

    120.8495

  • 100

    10.451615

    1045.1615

  • 500

    9.471804

    4735.902

  • 1000

    8.68793

    8687.93

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Product Information

Parameter Info
User Guide
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tube
FET Type N-Channel
Vgs (Max) +22V, -6V
Technology SiCFET (Silicon Carbide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1.4mA
Base Product Number SCT2280
Operating Temperature 175°C (TJ)
Rds On (Max) @ Id, Vgs 364mOhm @ 4A, 18V
Power Dissipation (Max) 108W (Tc)
Supplier Device Package TO-247N
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 400 V
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 667 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On) 18V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)