SE10FJHM3/I
Vishay General Semiconductor - Diodes Division
Product No:
SE10FJHM3/I
Manufacturer:
Package:
DO-219AB (SMF)
Batch:
-
Datasheet:
Description:
DIODE GEN PURP 600V 1A DO219AB
Quantity:
Delivery:
Payment:
In Stock : 30415 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.4085
0.4085
10
0.30875
3.0875
100
0.192185
19.2185
500
0.13148
65.74
1000
0.101128
101.128
2000
0.09102
182.04
5000
0.085966
429.83
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Product Information
Parameter Info
User Guide
| Mfr | Vishay General Semiconductor - Diodes Division |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Series | Automotive, AEC-Q101 |
| Package | Tape & Reel (TR) |
| Technology | Standard |
| Mounting Type | Surface Mount |
| Package / Case | DO-219AB |
| Product Status | Active |
| Base Product Number | SE10 |
| Capacitance @ Vr, F | 7.5pF @ 4V, 1MHz |
| Supplier Device Package | DO-219AB (SMF) |
| Reverse Recovery Time (trr) | 780 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 1A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.05 V @ 1 A |
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