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SI2312BDS-T1-BE3
Vishay Siliconix
Product No:
SI2312BDS-T1-BE3
Manufacturer:
Package:
SOT-23-3 (TO-236)
Batch:
-
Datasheet:
Description:
N-CHANNEL 20-V (D-S) MOSFET
Quantity:
Delivery:
Payment:
In Stock : 760 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.5225
0.5225
10
0.4465
4.465
100
0.31008
31.008
500
0.242117
121.0585
1000
0.196792
196.792
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 850mV @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 5A, 4.5V |
| Power Dissipation (Max) | 750mW (Ta) |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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