SI3127DV-T1-GE3
Vishay Siliconix
Product No:
SI3127DV-T1-GE3
Manufacturer:
Package:
6-TSOP
Batch:
-
Datasheet:
Description:
MOSFET P-CH 60V 3.5A/13A 6TSOP
Quantity:
Delivery:
Payment:
In Stock : 20045 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.437
0.437
10
0.37335
3.7335
100
0.259445
25.9445
500
0.202578
101.289
1000
0.164654
164.654
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Base Product Number | SI3127 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 89mOhm @ 1.5A, 4.5V |
| Power Dissipation (Max) | 2W (Ta), 4.2W (Tc) |
| Supplier Device Package | 6-TSOP |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 833 pF @ 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta), 13A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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