SI3900DV-T1-GE3
Vishay Siliconix
Product No:
SI3900DV-T1-GE3
Manufacturer:
Package:
6-TSOP
Batch:
-
Datasheet:
Description:
MOSFET 2N-CH 20V 2A 6-TSOP
Quantity:
Delivery:
Payment:
In Stock : 2871 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.8835
0.8835
10
0.7923
7.923
100
0.61788
61.788
500
0.510454
255.227
1000
0.40299
402.99
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate |
| Power - Max | 830mW |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Base Product Number | SI3900 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.4A, 4.5V |
| Supplier Device Package | 6-TSOP |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Current - Continuous Drain (Id) @ 25°C | 2A |
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