SI4425FDY-T1-GE3
Vishay Siliconix
Product No:
SI4425FDY-T1-GE3
Manufacturer:
Package:
8-SOIC
Batch:
-
Datasheet:
Description:
MOSFET P-CH 30V 12.7/18.3A 8SOIC
Quantity:
Delivery:
Payment:
In Stock : 9977 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.6555
0.6555
10
0.56525
5.6525
100
0.3914
39.14
500
0.327047
163.5235
1000
0.278331
278.331
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | +16V, -20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Base Product Number | SI4425 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 10A, 10V |
| Power Dissipation (Max) | 2.3W (Ta), 4.8W (Tc) |
| Supplier Device Package | 8-SOIC |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 12.7A (Ta), 18.3A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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