SI4590DY-T1-GE3
Vishay Siliconix
Product No:
SI4590DY-T1-GE3
Manufacturer:
Package:
8-SOIC
Batch:
-
Datasheet:
Description:
MOSFET N/P CHAN 100V SO8 DUAL
Quantity:
Delivery:
Payment:
In Stock : 6863 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.874
0.874
10
0.7543
7.543
100
0.522405
52.2405
500
0.436525
218.2625
1000
0.371516
371.516
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Technology | - |
| FET Feature | - |
| Power - Max | 2.4W, 3.4W |
| Configuration | N and P-Channel |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Base Product Number | SI4590 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 2A, 10V |
| Supplier Device Package | 8-SOIC |
| Gate Charge (Qg) (Max) @ Vgs | 11.5nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A, 2.8A |
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