SI8800EDB-T2-E1
Vishay Siliconix
Product No:
SI8800EDB-T2-E1
Manufacturer:
Package:
4-Microfoot
Batch:
-
Datasheet:
Description:
MOSFET N-CH 20V 4MICROFOOT
Quantity:
Delivery:
Payment:
In Stock : 5 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.4275
0.4275
10
0.3648
3.648
100
0.272175
27.2175
500
0.213826
106.913
1000
0.165234
165.234
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 4-XFBGA, CSPBGA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Base Product Number | SI8800 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 1A, 4.5V |
| Power Dissipation (Max) | 500mW (Ta) |
| Supplier Device Package | 4-Microfoot |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 8 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
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30,000,000Standard Product Unit
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