SI8812DB-T2-E1
Vishay Siliconix
Product No:
SI8812DB-T2-E1
Manufacturer:
Package:
4-Microfoot
Batch:
-
Datasheet:
Description:
MOSFET N-CH 20V 4MICROFOOT
Quantity:
Delivery:
Payment:
In Stock : 2690 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.399
0.399
10
0.3401
3.401
100
0.25384
25.384
500
0.199481
99.7405
1000
0.154147
154.147
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±5V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 4-UFBGA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Base Product Number | SI8812 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 1A, 4.5V |
| Power Dissipation (Max) | 500mW (Ta) |
| Supplier Device Package | 4-Microfoot |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 8 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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