SIDR220DP-T1-GE3
Vishay Siliconix
Product No:
SIDR220DP-T1-GE3
Manufacturer:
Package:
PowerPAK® SO-8DC
Batch:
-
Datasheet:
Description:
MOSFET N-CH 25V 87.7A/100A PPAK
Quantity:
Delivery:
Payment:
In Stock : 2975 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
2.5555
2.5555
10
2.1261
21.261
100
1.69233
169.233
500
1.431973
715.9865
1000
1.215012
1215.012
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | +16V, -12V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Base Product Number | SIDR220 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 20A, 10V |
| Power Dissipation (Max) | 6.25W (Ta), 125W (Tc) |
| Supplier Device Package | PowerPAK® SO-8DC |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 25 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1085 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 87.7A (Ta), 100A (Tc) |
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30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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