SIE812DF-T1-GE3

Vishay Siliconix

Product No:

SIE812DF-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

10-PolarPAK® (L)

Batch:

-

Datasheet:

Description:

MOSFET N-CH 40V 60A 10POLARPAK

Quantity:

Delivery:

Payment:

In Stock : 275

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    3.154

    3.154

  • 10

    2.83195

    28.3195

  • 100

    2.32009

    232.009

  • 500

    1.975031

    987.5155

  • 1000

    1.665692

    1665.692

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Product Information

Parameter Info
User Guide
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 10-PolarPAK® (L)
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Base Product Number SIE812
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 2.6mOhm @ 25A, 10V
Power Dissipation (Max) 5.2W (Ta), 125W (Tc)
Supplier Device Package 10-PolarPAK® (L)
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
Drain to Source Voltage (Vdss) 40 V
Input Capacitance (Ciss) (Max) @ Vds 8300 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)